专利摘要:
Output drivers preferably contain a plurality of driver circuits therein that are commonly connected to an output line to be driven and can be selectively enabled or disabled to increase or decrease drive capability, respectively. Driver circuits may include first and second control signal lines (e.g., MRS1, MRS2), a first pull-up/pull-down driver circuit having first and second data inputs, a first control input electrically coupled to the first control signal line (e.g., MRS1) and a second control input, and a second pull-up/pull-down driver circuit having first and second data inputs electrically coupled to the first and second data inputs of the first pull-up/pull-down driver circuit, respectively, a first control input electrically coupled to the second control signal line (e.g., MRS2) and a second control input. First and second complementary control signals lines (e.g., {overscore (MRS1)}, {overscore (MRS2)}) are also preferably provided and the second control inputs of the first pull-up/pull-down driver circuit and second pull-up/pull-down driver circuit are electrically coupled to the first and second complementary control signal lines, respectively. These control signal lines and complementary control signal lines can be used to control the number of driver circuits that are active within the output driver, based on loading conditions.
公开号:US20010000949A1
申请号:US09/753,927
申请日:2001-01-03
公开日:2001-05-10
发明作者:Sang-Jae Rhee
申请人:Sang-Jae Rhee;
IPC主号:G11C7-1057
专利说明:
[1] 1. The present invention relates to integrated circuit devices, and more particularly to integrated circuit devices having output driver circuits therein. BACKGROUND OF THE INVENTION
[2] 2. Integrated circuit devices may contain specialized output driver circuits therein for driving external devices when the loads associated with the external devices are appreciable. Referring now to FIG. 1, an integrated circuit device may also be provided having a plurality of memory modules 111, 113, 115 and 117 therein which are electrically coupled to a data bus (DATA), a command bus (CMD) and a chip select (CS) signal line. Each memory module may itself be comprised of a plurality of memory devices 101, 103, 105 and 107. As will be understood by those skilled in the art, an increase in the number of memory modules on an integrated circuit system board may lead to unbalanced loading on the memory modules. Such unbalanced loading may be caused by the unequal lengths in the signal lines connected to the modules and may result in clock skew which limits high frequency performance.
[3] 3.FIG. 2 illustrates a conventional output driver circuit which comprises a PMOS pull-up transistor P1 and an NMOS pull-down transistor N1, connected as illustrated. As will be understood by those skilled in the art, application of logic 0 signals as DOKP and DOKN to the gates of the PMOS pull-up transistor P1 and NMOS pull-down transistor N1 will cause the output DOUT to be pulled to VCC. Similarly, application of logic 1 signals as DOKP and DOKN to the gates of the PMOS pull-up transistor P1 and NMOS pull-down transistor N1 will cause the output DOUT to be pulled to VSS. Finally, simultaneous application of a logic 1 signal as DOKP to the gate of the PMOS pull-up transistor P1 and a logic 0 signal as DOKN to the gate of the NMOS pull-down transistor N1 will cause the output DOUT to float in a high impedance state.
[4] 4.FIG. 3 illustrates another conventional output driver circuit which comprises an NMOS pull-up transistor N2 and an NMOS pull-down transistor N3, connected as illustrated. As will be understood by those skilled in the art, application of logic 1 and logic 0 signals as DOKP and DOKN, respectively, will cause the output DOUT to be pulled to VCC. Similarly, application of logic 0 and logic 1 signals as DOKP and DOKN, respectively, will cause the output DOUT to be pulled to VSS. Finally, simultaneous application of logic 0 signals as DOKP and DOKN will cause the output DOUT to float in a high impedance state.
[5] 5. Unfortunately, the driving capability of the circuits of FIG. 2 and 3, which is a function of the sizes of the pull-up and pull-down transistors, is fixed and typically cannot be varied in response to dynamic or static variations in loading. Thus, notwithstanding these conventional driver circuits, there continues to be a need for improved driver circuits which account for variations in loading. SUMMARY OF THE INVENTION
[6] 6. It is therefore an object of the present invention to provide improved driver circuits and integrated circuit devices containing improved driver circuits therein.
[7] 7. It is another object of the present invention to provide driver circuits which can account for variations in loading.
[8] 8. These and other objects, features and advantages of the present invention are provided by output drivers which contain a plurality of driver circuits therein that are commonly connected to an output line to be driven and can be selectively enabled or disabled to increase or decrease drive capability, respectively. Driver circuits according to an embodiment of the present invention include first and second control signal lines (e.g., MRS1, MRS2), a first pull-up/pull-down driver circuit having first and second data inputs, a first control input electrically coupled to the first control signal line (e.g., MRS1) and a second control input, and a second pull-up/pull-down driver circuit having first and second data inputs electrically coupled to the first and second data inputs of the first pull-up/pull-down driver circuit, respectively, a first control input electrically coupled to the second control signal line (e.g., MRS2) and a second control input. First and second complementary control signals lines (e.g., {overscore (MRS1)}, {overscore (MRS2)}) are also preferably provided and the second control inputs of the first pull-up/pull-down driver circuit and second pull-up/pull-down driver circuit are electrically coupled to the first and second complementary control signal lines, respectively. These control signal lines and complementary control signal lines can be used to control the number of driver circuits that are active within the output driver, based on loading conditions.
[9] 9. According to a preferred aspect of the present invention, the first and second pull-up/pull-down driver circuits each comprise first and second PMOS transistors and first and second NMOS transistors. In particular, the first and second NMOS transistors of the first pull-up/pull-down driver circuit have respective gate electrodes which correspond to the first data input and the first control input, respectively, and the first and second PMOS transistors of the first pull-up/pull-down driver circuit have respective gate electrodes which correspond to the second data input and the second control input, respectively. Alternatively, the plurality of pull-up/pull-down driver circuits may each comprise four MOS transistors of the same type electrically connected in series between first and second supply signal lines (e.g., VCC and VSS).
[10] 10. According to another aspect of the present invention, a pull-up/pull-down driver circuit is provided which is always active to provide a baseline level of drive capability. In particular, a third pull-up/pull-down driver circuit may be provided which comprises only a single pair of MOS transistors and has first and second data inputs electrically coupled to the first and second data inputs of the first pull-up/pull-down driver circuit, respectively.
[11] 11. In addition, a controller is preferably provided which generates a first pair of complementary control signals on the first control signal line and the first complementary control signal line and generates a second pair of complementary control signals on the second control signal line and the second complementary control signal line, in response to command signals and an address. If the preferred driver circuit is used in an integrated circuit memory device, a memory array may also be provided which is electrically coupled to a pair of differential data lines and a data buffer may be provided which has first and second inputs electrically coupled to the pair of differential data lines and first and second outputs electrically coupled to the first and second data inputs of the first pull-up/pull-down driver circuit. BRIEF DESCRIPTION OF THE DRAWINGS
[12] 12.FIG. 1 is a block diagram of a system board containing a memory module array therein, according to the prior art.
[13] 13.FIG. 2 is an electrical schematic of an output driver circuit according to the prior art.
[14] 14.FIG. 3 is an electrical schematic of another output driver circuit according to the prior art.
[15] 15.FIG. 4 is a block diagram of a preferred memory device according to an embodiment of the present invention.
[16] 16.FIG. 5 is an electrical schematic of the programmable output driver of FIG. 4, according to a first embodiment of the present invention.
[17] 17.FIG. 6 is an electrical schematic of the programmable output driver of FIG. 4, according to a second embodiment of the present invention.
[18] 18.FIG. 7 is a block diagram of the controller of FIG. 4.
[19] 19.FIG. 8 is an electrical schematic of an embodiment of the control signal generator of FIG. 7.
[20] 20.FIG. 9 is a timing diagram which illustrates operation of the controller of FIG. 7. DESCRIPTION OF PREFERRED EMBODIMENTS
[21] 21. The present invention will now be described in greater detail with reference to the accompanying drawings, in which preferred embodiments of the invention are shown. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Like numbers refer to like elements throughout.
[22] 22. Referring now to FIG. 4, a preferred memory device includes a memory cell array block 401, a data output buffer 403, a programmable output driver 405 (which is coupled to an output pad DOUT) and an output driver controller 407. The data output buffer 403 receives differential output data from the memory cell array block 401 via complementary data buses DB and {overscore (DB)}, and generates first and second output signals DOKP and DOKN. The programmable output driver 405 has a driving capability which can be varied in response to a plurality of control signals MRS1/{overscore (MRS1)}-MRS4/{overscore (MRS4)} and in response to the first and second output signals DOKP and DOKN. The output driver controller 407 is also provided to generate the plurality of control signals MRS1/{overscore (MRS1)}-MRS4/{overscore (MRS4)}, in response to command signals (CMD) and address signals A1-A4. These command signals include a row address strobe signal {overscore (RAS)}, a column address strobe signal {overscore (CAS)} and a write enable signal {overscore (WE)}.
[23] 23. In particular, the driving capability of the preferred output driver 405 can be programmed when the command signals {overscore (RAS)}, {overscore (GAS)} and {overscore (WE)} are properly activated, the addresses A1-A4 are applied and the plurality of control signals MRS1/{overscore (MRS1)}-MRS4/{overscore (MRS4)} are generated. These control signals are generated at respective complementary levels based on the values of the addresses A1-A4, as described more fully hereinbelow with respect to FIGS. 7-8.
[24] 24. Accordingly, when a system board includes a plurality of modules and each module includes a plurality of semiconductor memory devices, as illustrated by FIG. 1, the size of the output driver for each memory device can be selectively programmed to account for different loading conditions associated with each device and module. Thus, the skew between signals generated by memory devices within modules at different positions within a system board can be efficiently reduced.
[25] 25. The structure and operation of preferred programmable output driver circuits 405 will now be described with reference to FIGS. 5-6. Referring specifically to FIG. 5, the programmable output driver circuit 405 according to a first embodiment includes four output driving units 501, 503, 505 and 507 for driving an output pad DOUT in response to first and second output signals DOKP and DOKN. Each of the output driving units 501, 503, 505 and 507 is independently controlled by corresponding control signals MRS1/{overscore (MRS1)}-MRS4/{overscore (MRS4)}. The number of programmable output driving units can be adjusted depending upon application. Each of the output driving units 501, 503, 505 and 507 includes: (i) PMOS switch transistors 501 a, 503 a, 505 a and 507 a (each of which has a source to which a power supply voltage VCC is applied and a gate to which a corresponding inverted control signal, one of {overscore (MRS1)}-{overscore (MRS4)}, is applied); (ii) PMOS pull-up transistors 501 b, 503 b, 505 b and 507 b (each of which has a source connected to a respective drain of a PMOS switch transistor, a gate to which the first output signal DOKP is applied and a drain connected to the pad DOUT); (iii) NMOS pull-down transistors 501 c, 503 c, 505 c and 507 c (each of which has a drain connected to the pad DOUT and a gate to which the second output signal DOKN is applied); and (iv) NMOS switch transistors 501 d, 503 d, 505 d and 507 d (each of which has a drain connected to source of a respective NMOS pull-down transistor, a gate to which a corresponding control signal, one of MRS1-MRS4, is applied and a source to which a ground voltage VSS is applied).
[26] 26. Based on this configuration of driving units, the effective size of the output driver 405 can be controlled by selectively turning on or off the PMOS switch transistors 501 a, 503 a, 505 a and 507 a (which are controlled by the inverted control signals {overscore (MRS1)}-{overscore (MRS4)}) and turning on or off the corresponding NMOS switch transistors 501 d, 503 d, 505 d and 507 d controlled by the control signals MRS1-MRS4. For example, when the control signals MRS1-MRS4 are set to (1,1,1,1), the PMOS switch transistors 501 a, 503 a, 505 a and 507 a and the NMOS switch transistors 501 d, 503 d, 505 d and 507 d of the output driving units 501, 503, 505 and 507 are all turned on. This means the driving units 501, 503, 505 and 507 all drive the output pad DOUT in parallel in response to the first and second output signals DOKP and DOKN. However, when the control signals MRS1-MRS4 are set to (0,0,0,1), the PMOS switch transistors 501 a, 503 a and 505 a and the NMOS switch transistors 501 d, 503 d and 505 d of the output driving units 501, 503 and 505 are turned off, and the PMOS switch transistor 507 a and the NMOS switch transistor 507 d of the output driving unit 507 are turned on. Accordingly, only a single driving unit 507 drives the output pad DOUT in response to the first and second output signals DOKP and DOKN. Finally, when the control signals MRS1-MRS4 are set to (0,0,0,0), no output drive capability is provided.
[27] 27. To address this limitation of the driver of FIG. 5 when the control signals MRS1-MRS4 are set to (0,0,0,0), an additional driving unit can be added which is not responsive to the control signals. In particular, the programmable output driver circuit 405 of FIG. 6 includes an additional driving unit 609 which is responsive to the first and second output signals DOKP and DOKN and provides output drive capability even if the control signals MRS1-MRS4 are set to (0,0,0,0).
[28] 28. Referring specifically to FIG. 6, the programmable output driver circuit 405 according to a second embodiment includes five output driving units 601, 603, 605, 607 and 609 for driving an output pad DOUT in response to first and second output signals DOKP and DOKN. Each of the output driving units 601, 603, 605 and 607 is independently controlled by corresponding control signals MRS1/{overscore (MRS1)}-MRS4/{overscore (MRS4)}. Each of the output driving units 601, 603, 605 and 607 includes: (i) PMOS switch transistors 601 a, 603 a, 605 a and 607 a (each of which has a source to which a power supply voltage VCC is applied and a gate to which a corresponding inverted control signal, one of {overscore (MRS1)}-{overscore (MRS4)}, is applied); (ii) PMOS pull-up transistors 601 b, 603 b, 605 b and 607 b (each of which has a source connected to a respective drain of a PMOS switch transistor, a gate to which the first output signal DOKP is applied and a drain connected to the pad DOUT); (iii) NMOS pull-down transistors 601 c, 603 c, 605 c and 607 c (each of which has a drain connected to the pad DOUT and a gate to which the second output signal DOKN is applied); and (iv) NMOS switch transistors 601 d, 603 d, 605 d and 607 d (each of which has a drain connected to source of a respective NMOS pull-down transistor, a gate to which a corresponding control signal, one of MRS1-MRS4, is applied and a source to which a ground voltage VSS is applied). Based on this configuration of driving units, the effective size of the output driver 405 can be controlled by selective turning on or off the PMOS switch transistors 601 a, 603 a, 605 a and 607 a (which are controlled by the inverted control signals {overscore (MRS1)}-{overscore (MRS4)}) and turning on or off the corresponding NMOS switch transistors 601 d, 603 d, 605 d and 607 d controlled by the control signals MRS1-MRS4. For example, when the control signals MRS1-MRS4 are set to (1,1,1,1), the PMOS switch transistors 601 a, 603 a, 605 a and 607 a and the NMOS switch transistors 601 d, 603 d, 605 d and 607 d of the output driving units 601, 603, 605 and 607 are all turned on. This means the driving units 601, 603, 605, 607 and 609 all drive the output pad DOUT in parallel in response to the first and second output signals DOKP and DOKN. However, when the control signals MRS1-MRS4 are set to (0,0,0,1), the PMOS switch transistors 601 a, 603 a and 605 a and the NMOS switch transistors 601 d, 603 d and 605 d of the output driving units 601, 603 and 605 are turned off, and the PMOS switch transistor 607 a and the NMOS switch transistor 607 d of the output driving unit 607 are turned on. Accordingly, only driving units 607 and 609 drive the output pad DOUT in response to the first and second output signals DOKP and DOKN. Alternative embodiments of the above described driver circuit 405 may also be provided. For example, NMOS transistors may be substituted for the PMOS transistors 601 b,603 b , 605 b, 607 b and 609 a of FIG. 6. In addition, if NMOS transistors are substituted for the PMOS transistors 601 a, 603 a, 605 a and 607 a of FIG. 6, the inverted control signals {overscore (MRS1)}-{overscore (MRS4)} need not be generated.
[29] 29. Referring now to FIGS. 7 and 9, the output driver controller 407 of FIG. 4 preferably includes a mode register set controller 701, a control signal generator 703 and an address buffer 705. The mode register set controller 701 receives a clock signal CLK and generates a mode control signal φMRS in response to command signals. These command signals include a row address strobe signal {overscore (RAS)}, a column address strobe signal {overscore (CAS)} and a write enable signal {overscore (WE)}. The mode control signal φMRS is activated when the command signals are appropriately activated at the time the clock signal CLK transitions from 0→1. The control signal generator 703 generates the control signals MRS1-MRS4 and the inverted control signals {overscore (MRS1)}-{overscore (MRS4)} in response to the mode control signal φMRS and buffered address signals ADD1-ADD4. As will be understood by those skilled in the art, the address buffer 705 buffers the external addresses A1-A4 which are applied.
[30] 30. Referring to FIGS. 8 and 9, the control signal generator 703 of FIG. 7 may include NAND gates 803 a-803 d and inverters 803 c-803 l, and reproduces each bit of the addresses ADD1-ADD4 as the control signals MRS1-MRS4 when the mode control signal φMRS is active. Whenever the mode control signal is inactive (i.e., at a logic 0 potential), the control signals MRS1-MRS4 are set to logic 0 potentials and the inverted control signals {overscore (MRS1)}-{overscore (MRS4)} are set to logic 1 potentials which turn off the output driver circuit 405.
[31] 31. In the drawings and specification, there have been disclosed typical preferred embodiments of the invention and, although specific terms are employed, they are used in a generic and descriptive sense only and not for purposes of limitation, the scope of the invention being set forth in the following claims.
权利要求:
Claims (15)
[1" id="US-20010000949-A1-CLM-00001] 1. A programmable output driver circuit, comprising:
first and second control signal lines;
a first pull-up/pull-down driver circuit, said first pull-up/pull-down driver circuit having first and second data inputs, a first control input electrically coupled to said first control signal line, a second control input and an output; and
a second pull-up/pull-down driver circuit, said second pull-up/pull-down driver circuit having first and second data inputs electrically coupled to the first and second data inputs of said first pull-up/pull-down driver circuit, respectively, a first control input electrically coupled to said second control signal line, a second control input and an output electrically coupled to the output of said first pull-up/pull-down driver circuit.
[2" id="US-20010000949-A1-CLM-00002] 2. The driver circuit of
claim 1 , further comprising first and second complementary control signals lines; wherein the second control input of said first pull-up/pull-down driver circuit is electrically coupled to said first complementary control signal line; and wherein the second control input of said second pull-up/pull-down driver circuit is electrically coupled to said second complementary control signal line.
[3" id="US-20010000949-A1-CLM-00003] 3. The driver circuit of
claim 2 , wherein said first and second pull-up/pull-down driver circuits each comprise first and second PMOS transistors and first and second NMOS transistors.
[4" id="US-20010000949-A1-CLM-00004] 4. The driver circuit of
claim 3 , wherein the first and second NMOS transistors of said first pull-up/pull-down driver circuit have respective gate electrodes which correspond to the first data input and the first control input, respectively; and wherein the first and second PMOS transistors of said first pull-up/pull-down driver circuit have respective gate electrodes which correspond to the second data input and the second control input, respectively.
[5" id="US-20010000949-A1-CLM-00005] 5. The driver circuit of
claim 1 , wherein said first pull-up/pull-down driver circuit comprises four MOS transistors of the same type electrically connected in series between first and second supply signal lines.
[6" id="US-20010000949-A1-CLM-00006] 6. The driver circuit of
claim 4 , further comprising a third pull-up/pull-down driver circuit having first and second data inputs electrically coupled to the first and second data inputs of said first pull-up/pull-down driver circuit, respectively.
[7" id="US-20010000949-A1-CLM-00007] 7. The driver circuit of
claim 6 , wherein outputs of said first, second and third pull-up/pull-down driver circuits are electrically coupled together; and wherein said third pull-up/pull-down driver circuit comprises only a single pair of MOS transistors.
[8" id="US-20010000949-A1-CLM-00008] 8. The driver circuit of
claim 7 , further comprising means, responsive to a plurality of command signals and an address, for generating a first pair of complementary control signals on the first control signal line and first complementary control signal line and generating a second pair of complementary control signals on the second control signal line and second complementary control signal line; wherein outputs of said first, second and third pull-up/pull-down driver circuits are electrically coupled together; and wherein said third pull-up/pull-down driver circuit is not responsive to said generating means.
[9" id="US-20010000949-A1-CLM-00009] 9. The driver circuit of
claim 8 , wherein the command signals include a row address strobe signal, a column address strobe signal and a write enable signal.
[10" id="US-20010000949-A1-CLM-00010] 10. The driver circuit of
claim 8 , further comprising a memory array electrically coupled to a pair of differential data lines; and a data buffer having first and second inputs electrically coupled to the pair of differential data lines and first and second outputs electrically coupled to the first and second data inputs of said first pull-up/pull-down driver circuit.
[11" id="US-20010000949-A1-CLM-00011] 11. An integrated circuit memory device, comprising:
a memory cell array electrically coupled to a pair of differential data lines;
an output buffer having first and second inputs electrically coupled to the pair of differential data lines;
a plurality of pairs of differential control signal lines; and
a programmable output driver having first and second data inputs electrically coupled to at least one output of said output buffer and a plurality of pairs of differential control inputs electrically coupled to said plurality of pairs of differential control signal lines.
[12" id="US-20010000949-A1-CLM-00012] 12. The memory device of
claim 11 , wherein said programmable output driver comprises first, second and third pull-up/pull-down driver circuits having outputs electrically coupled together.
[13" id="US-20010000949-A1-CLM-00013] 13. The memory device of
claim 12 , wherein each of the first, second and third pull-up/pull-down driver circuits has a pair of inputs electrically coupled to the first and second data inputs.
[14" id="US-20010000949-A1-CLM-00014] 14. The memory device of
claim 13 , wherein each of the first, second and third pull-up/pull-down driver circuits comprises a pair of PMOS transistors and a pair of NMOS transistors.
[15" id="US-20010000949-A1-CLM-00015] 15. The memory device of
claim 14 , wherein one of the NMOS transistors in the first pull-up/pull-down driver circuit has a gate electrode electrically coupled to one of a first pair of differential control signal lines; and wherein one of the PMOS transistors in the first pull-up/pull-down driver circuit has a gate electrode electrically coupled to another of the first pair of differential control signal lines.
类似技术:
公开号 | 公开日 | 专利标题
US6362656B2|2002-03-26|Integrated circuit memory devices having programmable output driver circuits therein
US6058063A|2000-05-02|Integrated circuit memory devices having reduced power consumption requirements during standby mode operation
US6282128B1|2001-08-28|Integrated circuit memory devices having multiple data rate mode capability and methods of operating same
US6870776B2|2005-03-22|Data output circuit in combined SDR/DDR semiconductor memory device
GB2325322A|1998-11-18|A high speed and low power signal line driver and semiconductor memory device using the same
US7107500B2|2006-09-12|Test mode circuit of semiconductor memory device
US20140285237A1|2014-09-25|Tri-state driver circuits having automatic high-impedance enabling
US6445226B2|2002-09-03|Output circuit converting an internal power supply potential into an external supply potential in a semiconductor apparatus
US7139847B2|2006-11-21|Semiconductor memory device having externally controllable data input and output mode
US4905201A|1990-02-27|Semiconductor memory device capable of selective operation of memory cell blocks
US5812492A|1998-09-22|Control signal generation circuit and semiconductor memory device that can correspond to high speed external clock signal
CN1140904C|2004-03-03|Synchronous semiconductor memory device with clock generating circuit
KR19990014168A|1999-02-25|A semiconductor memory device having a burn-in test function
US5682110A|1997-10-28|Low capacitance bus driver
US5373470A|1994-12-13|Method and circuit for configuring I/O devices
US6378008B1|2002-04-23|Output data path scheme in a memory device
US5040151A|1991-08-13|Memory circuit with improved power interconnections
US5598371A|1997-01-28|Data input/output sensing circuit of semiconductor memory device
JPH05325557A|1993-12-10|Semiconductor memory
US6597201B1|2003-07-22|Dynamic predecoder circuitry for memory circuits
KR100745053B1|2007-08-01|Circuit for Driving Output
JP2631925B2|1997-07-16|MOS type RAM
US7286424B2|2007-10-23|Semiconductor integrated circuit device
KR100331548B1|2002-04-06|Semiconductor memory device capable of preventing mis-operation due to load of column address line
GB2332995A|1999-07-07|CMOS and NMOS output drivers with programmable drive capability
同族专利:
公开号 | 公开日
US6362656B2|2002-03-26|
JPH1125678A|1999-01-29|
TW393649B|2000-06-11|
US6208168B1|2001-03-27|
引用文献:
公开号 | 申请日 | 公开日 | 申请人 | 专利标题
US6894529B1|2003-07-09|2005-05-17|Integrated Device Technology, Inc.|Impedance-matched output driver circuits having linear characteristics and enhanced coarse and fine tuning control|
US6967501B1|2003-12-18|2005-11-22|Integrated Device Technology, Inc.|Impedance-matched output driver circuits having enhanced predriver control|
US20070103186A1|2005-10-27|2007-05-10|Clements Steven M|Self series terminated serial link transmitter having segmentation for amplitude, pre-emphasis, and slew rate control and voltage regulation for amplitude accuracy and high voltage protection|
US20070170958A1|2004-02-11|2007-07-26|Koninklijke Philips Electronics N.V.|High voltage driver circuit with fast slow voltage operation|
US7411419B1|2005-08-09|2008-08-12|Lattice Semiconductor Corporation|Input/output systems and methods|
US20080297199A1|2007-06-04|2008-12-04|Micron Technology, Inc.|Adjustable drive strength apparatus, systems, and methods|EP0253914A1|1986-07-23|1988-01-27|Deutsche ITT Industries GmbH|Insulated-gate field-effect transistor push-pull driver stage with compensation for fluctuations of working parameters and variations in manufacturing process|
KR910004735B1|1988-07-18|1991-07-10|삼성전자 주식회사|Butter circuit for data output|
US5134311A|1990-06-07|1992-07-28|International Business Machines Corporation|Self-adjusting impedance matching driver|
US5397942A|1991-08-23|1995-03-14|Nec Corporation|Driver circuit for a plurality of outputs|
US5153450A|1991-07-16|1992-10-06|Samsung Semiconductor, Inc.|Programmable output drive circuit|
JPH0591522A|1991-09-30|1993-04-09|Toshiba Corp|Digital oscillator and chrominance subcarrier reproducing circuit using same|
US5227679A|1992-01-02|1993-07-13|Advanced Micro Devices, Inc.|Cmos digital-controlled delay gate|
US5220216A|1992-01-02|1993-06-15|Woo Ann K|Programmable driving power of a CMOS gate|
US5361003A|1993-01-14|1994-11-01|Micron Semiconductor, Inc.|Adjustable buffer driver|
US5477166A|1993-04-22|1995-12-19|Benchmarq Microelectronics|Programmable output device with integrated circuit|
JPH07335834A|1994-06-07|1995-12-22|Nippon Motorola Ltd|Output driver of semiconductor integrated circuit device|
KR100368120B1|1995-08-24|2003-03-31|삼성전자 주식회사|data output driver in semiconductor memory device|
US5719491A|1995-12-19|1998-02-17|Cherry Semiconductor Corporation|Output driver for high-speed device|
US5677555A|1995-12-22|1997-10-14|Cypress Semiconductor Corp.|Output driver transistor with multiple gate bodies|
US5666078A|1996-02-07|1997-09-09|International Business Machines Corporation|Programmable impedance output driver|
US5742832A|1996-02-09|1998-04-21|Advanced Micro Devices|Computer system with programmable driver output's strengths responsive to control signal matching preassigned address range|
US5732027A|1996-12-30|1998-03-24|Cypress Semiconductor Corporation|Memory having selectable output strength|
US5900744A|1996-12-30|1999-05-04|Intel Corporation|Method and apparatus for providing a high speed tristate buffer|US6518792B2|2001-06-11|2003-02-11|Sun Microsystems, Inc.|Method and circuitry for a pre-emphasis scheme for single-ended center taped terminated high speed digital signaling|
JP2003087109A|2001-09-13|2003-03-20|Mitsubishi Electric Corp|Output buffer of semiconductor device|
US6580290B1|2002-01-22|2003-06-17|Agilent Technologies, Inc.|Open collector/drain and SSTL compliant output driver circuit and method for operating the circuit|
US7123046B2|2002-02-13|2006-10-17|Micron Technology, Inc|Apparatus for adaptively adjusting a data receiver|
JP2003337640A|2002-05-21|2003-11-28|Mitsubishi Electric Corp|Bus control apparatus|
KR100505645B1|2002-10-17|2005-08-03|삼성전자주식회사|Output driver capable of controlling slew rate of output signal according to operating frequency information or CAS latency information|
US7142461B2|2002-11-20|2006-11-28|Micron Technology, Inc.|Active termination control though on module register|
JP3877673B2|2002-11-28|2007-02-07|株式会社東芝|Output buffer circuit and semiconductor memory using the same|
ITRM20030029A1|2003-01-27|2004-07-28|Micron Technology Inc|"STRENGTH" ADJUSTMENT FOR ELECTRONIC CIRCUIT OUTPUT BUFFERS.|
KR100546214B1|2003-11-13|2006-01-24|주식회사 하이닉스반도체|Data and Data Strobe Driver Strength Control Circuits for Semiconductor Devices|
KR100564586B1|2003-11-17|2006-03-29|삼성전자주식회사|Data output driver for controlling slew rate of output signal according to bit organization|
TWI267857B|2003-12-19|2006-12-01|Hynix Semiconductor Inc|Apparatus for adjusting slew rate in semiconductor memory device and method therefor|
KR100605590B1|2004-05-10|2006-07-31|주식회사 하이닉스반도체|Semiconductor memory device with ability to mediate impedance of data output-driver|
US7173450B2|2004-06-01|2007-02-06|Hewlett-Packard Development Company, L.P.|Bus controller|
JP2005346908A|2004-06-03|2005-12-15|Samsung Electronics Co Ltd|Device and system associated with method for modifying operating characteristic of memory device using control bit received through data pin|
JP4825429B2|2005-02-17|2011-11-30|富士通セミコンダクター株式会社|Semiconductor device|
US7233165B2|2005-03-31|2007-06-19|Seiko Epson Corporation|High speed driver for serial communications|
US8041881B2|2006-07-31|2011-10-18|Google Inc.|Memory device with emulated characteristics|
US8090897B2|2006-07-31|2012-01-03|Google Inc.|System and method for simulating an aspect of a memory circuit|
US10013371B2|2005-06-24|2018-07-03|Google Llc|Configurable memory circuit system and method|
US8359187B2|2005-06-24|2013-01-22|Google Inc.|Simulating a different number of memory circuit devices|
US7609567B2|2005-06-24|2009-10-27|Metaram, Inc.|System and method for simulating an aspect of a memory circuit|
US8060774B2|2005-06-24|2011-11-15|Google Inc.|Memory systems and memory modules|
US9171585B2|2005-06-24|2015-10-27|Google Inc.|Configurable memory circuit system and method|
US9507739B2|2005-06-24|2016-11-29|Google Inc.|Configurable memory circuit system and method|
DE112006001810T5|2005-06-24|2008-08-21|Metaram Inc., San Jose|Integrated memory core and memory interface circuitry|
US7571406B2|2005-08-04|2009-08-04|Freescale Semiconductor, Inc.|Clock tree adjustable buffer|
DE112006002300B4|2005-09-02|2013-12-19|Google, Inc.|Device for stacking DRAMs|
JP4930875B2|2005-09-29|2012-05-16|株式会社ハイニックスセミコンダクター|On-die termination control device|
US7489585B2|2005-09-29|2009-02-10|Hynix Semiconductor Inc.|Global signal driver for individually adjusting driving strength of each memory bank|
US9542352B2|2006-02-09|2017-01-10|Google Inc.|System and method for reducing command scheduling constraints of memory circuits|
US9632929B2|2006-02-09|2017-04-25|Google Inc.|Translating an address associated with a command communicated between a system and memory circuits|
US8089795B2|2006-02-09|2012-01-03|Google Inc.|Memory module with memory stack and interface with enhanced capabilities|
JP4901286B2|2006-04-24|2012-03-21|株式会社東芝|Semiconductor device and memory circuit system|
US8327104B2|2006-07-31|2012-12-04|Google Inc.|Adjusting the timing of signals associated with a memory system|
US7392338B2|2006-07-31|2008-06-24|Metaram, Inc.|Interface circuit system and method for autonomously performing power management operations in conjunction with a plurality of memory circuits|
US8077535B2|2006-07-31|2011-12-13|Google Inc.|Memory refresh apparatus and method|
US20080028136A1|2006-07-31|2008-01-31|Schakel Keith R|Method and apparatus for refresh management of memory modules|
US7724589B2|2006-07-31|2010-05-25|Google Inc.|System and method for delaying a signal communicated from a system to at least one of a plurality of memory circuits|
US7386656B2|2006-07-31|2008-06-10|Metaram, Inc.|Interface circuit system and method for performing power management operations in conjunction with only a portion of a memory circuit|
US7590796B2|2006-07-31|2009-09-15|Metaram, Inc.|System and method for power management in memory systems|
US8244971B2|2006-07-31|2012-08-14|Google Inc.|Memory circuit system and method|
US8209479B2|2007-07-18|2012-06-26|Google Inc.|Memory circuit system and method|
US8796830B1|2006-09-01|2014-08-05|Google Inc.|Stackable low-profile lead frame package|
US20080082763A1|2006-10-02|2008-04-03|Metaram, Inc.|Apparatus and method for power management of memory circuits by a system or component thereof|
US8055833B2|2006-10-05|2011-11-08|Google Inc.|System and method for increasing capacity, performance, and flexibility of flash storage|
US8397013B1|2006-10-05|2013-03-12|Google Inc.|Hybrid memory module|
US7902875B2|2006-11-03|2011-03-08|Micron Technology, Inc.|Output slew rate control|
US8130560B1|2006-11-13|2012-03-06|Google Inc.|Multi-rank partial width memory modules|
US8080874B1|2007-09-14|2011-12-20|Google Inc.|Providing additional space between an integrated circuit and a circuit board for positioning a component therebetween|
US8111566B1|2007-11-16|2012-02-07|Google, Inc.|Optimal channel design for memory devices for providing a high-speed memory interface|
US8081474B1|2007-12-18|2011-12-20|Google Inc.|Embossed heat spreader|
US8438328B2|2008-02-21|2013-05-07|Google Inc.|Emulation of abstracted DIMMs using abstracted DRAMs|
US8386722B1|2008-06-23|2013-02-26|Google Inc.|Stacked DIMM memory interface|
US8335894B1|2008-07-25|2012-12-18|Google Inc.|Configurable memory system with interface circuit|
KR101003153B1|2009-05-15|2010-12-21|주식회사 하이닉스반도체|Voltage Stabilization Circuit and a Semiconductor Memory Apparatus using the same|
DE202010017690U1|2009-06-09|2012-05-29|Google, Inc.|Programming dimming terminating resistor values|
JP2011124683A|2009-12-09|2011-06-23|Toshiba Corp|Output buffer circuit, input buffer circuit, and input/output buffer circuit|
KR101053543B1|2010-04-30|2011-08-03|주식회사 하이닉스반도체|Clock duty correction circuit|
KR101796116B1|2010-10-20|2017-11-10|삼성전자 주식회사|Semiconductor device, memory module and memory system having the same and operating method thereof|
US8587340B2|2012-03-27|2013-11-19|Micron Technology, Inc.|Apparatuses including scalable drivers and methods|
KR102012901B1|2012-12-03|2019-08-21|삼성전자주식회사|Operating method of input/output interface|
US9130557B2|2012-12-03|2015-09-08|Samsung Electronics Co., Ltd.|Operating method of input/output interface|
CN105493405B|2013-08-19|2018-09-25|国立研究开发法人科学技术振兴机构|Restructural delay circuit and delay observation circuit, distortion correction circuit, deviation measuring method and deviation correction method using the delay circuit|
US10419252B2|2015-06-22|2019-09-17|Qualcomm Incorporated|Low power physical layer driver topologies|
JP2017216611A|2016-06-01|2017-12-07|マイクロン テクノロジー, インク.|Semiconductor device|
US10312896B2|2017-08-07|2019-06-04|Samsung Electronics Co., Ltd.|Pulse amplitude modulation transmitter and pulse amplitude modulation receiver|
KR20210144074A|2020-05-21|2021-11-30|에스케이하이닉스 주식회사|Transmitter circuit|
法律状态:
2002-03-08| STCF| Information on status: patent grant|Free format text: PATENTED CASE |
2005-09-02| FPAY| Fee payment|Year of fee payment: 4 |
2009-08-28| FPAY| Fee payment|Year of fee payment: 8 |
2013-08-26| FPAY| Fee payment|Year of fee payment: 12 |
优先权:
申请号 | 申请日 | 专利标题
KR19970028114||1997-06-27||
KR1019970077760A|KR100278651B1|1997-06-27|1997-12-30|Programmable output driver and semiconductor memory device including the same|
KR97-28114||1997-12-30||
KR97-77760||1997-12-30||
US09/105,394|US6208168B1|1997-06-27|1998-06-26|Output driver circuits having programmable pull-up and pull-down capability for driving variable loads|
US09/753,927|US6362656B2|1997-06-27|2001-01-03|Integrated circuit memory devices having programmable output driver circuits therein|US09/753,927| US6362656B2|1997-06-27|2001-01-03|Integrated circuit memory devices having programmable output driver circuits therein|
[返回顶部]